Principle
The resistivity and Hall voltage of a rectangular germanium sample are measured as a function of temperature and magnetic field. The band spacing, the specific conductivity, the type of charge carrier and the mobility of the charge carriers are determined from the measurements.
Tasks
The Hall voltage is measured at room temperature and constant magnetic field as a function of the control current and plotted on a graph (measurement without compensation for defect voltage).
The voltage across the sample is measured at room temperature and constant control current as a function of the magnetic induction B.
The voltage across the sample is measured at constant control current as a function of the temperature. The band spacing of germanium is calculated from the measurements.
The Hall voltage UH is measured as a function of the magnetic induction B, at room temperature. The sign of the charge carriers and the Hall constant RH together with the Hall mobility μH and the carrier concentration p are calculated from the measurements.
The Hall voltage UH is measured as a function of temperature at constant magnetic induction B and the values are plotted on a graph.
What you can learn about
Semiconductor
Band theory
Forbidden zone
Intrinsic conductivity
Extrinsic conductivity
Valence band
Conduction band
Lorentz force
Magnetic resistance
Mobility
Conductivity
Band spacing
Hall coefficient
Software included. Computer not provided.
상품이 장바구니에 담겼습니다.
바로 확인하시겠습니까?
상품이 찜 리스트에 담겼습니다.
바로 확인하시겠습니까?